? semiconductor components industries, llc, 2006 march, 2006 ? rev. 1 1 publication order number: NTZD3152P/d NTZD3152P small signal mosfet ? 20 v, ? 430 ma, dual p ? channel with esd protection, sot ? 563 features ? low r ds(on) improving system efficiency ? low threshold voltage ? esd protected gate ? small footprint 1.6 x 1.6 mm ? these are pb ? free devices applications ? load/power switches ? power supply converter circuits ? battery management ? cell phones, digital cameras, pdas, pagers, etc. maximum ratings (t j = 25 c unless otherwise noted.) parameter symbol value unit drain ? to ? source voltage v dss ? 20 v gate ? to ? source voltage v gs 6.0 v continuous drain current (note 1) steady state t a = 25 c i d ? 430 ma t a = 85 c ? 310 power dissipation (note 1) steady state p d 250 mw continuous drain current (note 1) t 5 s t a = 25 c i d ? 455 ma t a = 85 c ? 328 power dissipation (note 1) t 5 s p d 280 mw pulsed drain current t p = 10 s i dm ? 750 ma operating junction and storage temperature t j , t stg ? 55 to 150 c source current (body diode) i s ? 350 ma lead temperature for soldering purposes (1/8 from case for 10 s) t l 260 c thermal resistance ratings parameter symbol max unit junction ? to ? ambient ? steady state (note 1) r ja 500 c/w junction ? to ? ambient ? t 5 s (note 1) 447 stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. surface mounted on fr4 board using 1 in. sq. pad size (cu. area = 1.127 in. sq. [1 oz.] including traces). http://onsemi.com v (br)dss r ds(on) typ i d max ? 20 v 0.5 @ ? 4.5 v 0.6 @ ? 2.5 v ? 430 ma 1.0 @ ? 1.8 v device package shipping ? ordering information NTZD3152Pt1g sot ? 563 (pb ? free) 4000 / tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specifications brochure, brd8011/d. top view d 1 g 2 s 2 s 1 g 1 6 5 4 1 2 3 d 2 pinout: sot ? 563 p ? channel mosfet NTZD3152Pt5g sot ? 563 (pb ? free) 8000 / tape & reel d 1 s 1 g 1 d 2 s 2 g 2 tu = specific device code m = date code = pb ? free package tu m 1 marking diagram 1 6 sot ? 563 ? 6 case 463a (note: microdot may be in either location)
NTZD3152P http://onsemi.com 2 electrical characteristics (t j = 25 c unless otherwise noted.) parameter symbol test condition min typ max unit off characteristics drain ? to ? source breakdown voltage v (br)dss v gs = 0 v, i d = ? 250 a ? 20 v drain ? to ? source breakdown voltage temperature coefficient v (br)dss /t j 18 mv/ c zero gate voltage drain current i dss v gs = 0 v t j = 25 c ? 1.0 a v ds = ? 16 v t j = 125 c ? 2.0 gate ? to ? source leakage current i gss v ds = 0 v, v gs = 4.5 v 2.0 a on characteristics (note 2) gate threshold voltage v gs(th) v gs = v ds , i d = ? 250 a ? 0.45 ? 1.0 v negative threshold temperature coefficient v gs(th) /t j ? 1.9 mv/ c drain ? to ? source on resistance r ds(on) v gs = ? 4.5 v, i d = ? 430 ma 0.5 0.9 v gs = ? 2.5 v, i d = ? 300 ma 0.6 1.2 v gs = ? 1.8 v, i d = ? 150 ma 1.0 2.0 forward transconductance g fs v ds = ? 10 v, i d = ? 430 ma 1.0 s charges and capacitances input capacitance c iss v gs = 0 v, f = 1.0 mhz, v ds = ? 16 v 105 175 pf output capacitance c oss 15 30 reverse transfer capacitance c rss 10 20 total gate charge q g(tot) v gs = ? 4.5 v, v ds = ? 10 v, i d = ? 215 ma 1.7 2.5 nc threshold gate charge q g(th) 0.1 gate ? to ? source charge q gs 0.3 gate ? to ? drain charge q gd 0.4 switching characteristics (note 3) turn ? on delay time t d(on) v gs = ? 4.5 v, v dd = ? 10 v, i d = ? 215 ma, r g = 10 10 ns rise time t r 12 turn ? off delay time t d(off) 35 fall time t f 19 drain ? source diode characteristics forward diode voltage v sd v gs = 0 v, i s = ? 350 ma t j = 25 c ? 0.8 ? 1.2 v reverse recovery time t rr v gs = 0 v, di sd /dt = 100 a/ s, i s = ? 350 ma 13 ns 2. pulse test: pulse width 300 s, duty cycle 2%. 3. switching characteristics are independent of operating junction temperatures.
NTZD3152P http://onsemi.com 3 typical performance curves (t j = 25 c unless otherwise noted) ? 1 v 100 c 0 1 5 0.6 6 3 2 ? v ds , drain ? to ? source voltage (volts) ? i d, drain current (amps) 0.4 0.2 0 1 figure 1. on ? region characteristics 0.5 1 2 1.5 2.5 0.8 0.4 0.2 1 0 0 figure 2. transfer characteristics ? v gs , gate ? to ? source voltage (volts) 0.5 35 0.7 0.6 0.4 figure 3. on ? resistance vs. gate ? to ? source voltage ? v gs , gate ? to ? source voltage (volts) r ds(on), drain ? to ? source resistance ( ) ? i d, drain current (amps) 0.1 1.0 0.8 figure 4. on ? resistance vs. drain current and gate voltage ? i d, drain current (amps) ? 50 0 ? 25 25 1.4 1.2 1 0.8 0.6 50 125 100 figure 5. on ? resistance variation with temperature t j , junction temperature ( c) t j = 25 c 24 t j = ? 55 c i d = ? 0.43 a t j = 25 c 1.4 0.5 75 150 t j = 25 c i d = ? 0.43 a v gs = ? 4.5 v r ds(on), drain ? to ? source resistance (normalized) 4 25 c r ds(on), drain ? to ? source resistance ( ) 1.6 v gs = ? 1.8 v ? 1.2 v 16 ? 1.4 v ? 1.6 v 1.3 0.6 1.1 v gs = ? 2.5 v 710 v ds ? 10 v 0.8 0.2 0.3 0.4 0.9 v gs = ? 1.8 v v gs = ? 2 v figure 6. drain ? to ? source leakage current vs. voltage 24 8 10 20 16 ? v ds , drain ? to ? source voltage (volts) 12 v gs = 0 v ? i dss , leakage (na) t j = 150 c t j = 100 c 100 1000 10000 610 18 14 0.45 0.65 0.55 0.75 0.7 1.0 1.2 0.5 0.6 0.7 0.8 0.9 0.8 89 0.6
NTZD3152P http://onsemi.com 4 typical performance curves (t j = 25 c unless otherwise noted) v gs = 0 v ? v gs 510 150 100 50 0 20 gate ? to ? source or drain ? to ? source voltage (volts) c, capacitance (pf) 02 1 4 1 0 q g , total gate charge (nc) ? v gs, gate ? to ? source voltage (volts) t j = 25 c c oss c iss c rss i d = ? 0.215 a t j = 25 c 250 1.8 1.6 2 3 ? v ds, drain ? to ? source voltage ( volts ) 10 8 2 0 q gd 10 1 10 1 100 r g , gate resistance ( ) t, time (ns) v dd = ? 10 v i d = ? 0.215 a v gs = ? 4.5 v 100 0 200 5 4 6 t d(off) t d(on) t f t r ? v ds 15 1.4 0.2 1.2 0.9 0.2 0 ? v sd , source ? to ? drain voltage (volts) ? i s , source current (amps) v gs = 0 v t j = 25 c 0.6 0.7 0.5 0.3 0.4 figure 7. capacitance variation figure 8. gate ? to ? source and drain ? to ? source voltage vs. total charge figure 9. resistive switching time variation vs. gate resistance figure 10. diode forward voltage vs. current 0.4 0.6 0.8 qt 0.8 0.6 0.4 9 3 1 5 7 q gs
NTZD3152P http://onsemi.com 5 package dimensions h e dim min nom max millimeters a 0.50 0.55 0.60 b 0.17 0.22 0.27 c d 1.50 1.60 1.70 e 1.10 1.20 1.30 e 0.5 bsc l 0.10 0.20 0.30 1.50 1.60 1.70 0.020 0.021 0.023 0.007 0.009 0.011 0.059 0.062 0.066 0.043 0.047 0.051 0.02 bsc 0.004 0.008 0.012 0.059 0.062 0.066 min nom max inches sot ? 563, 6 lead case 463a ? 01 issue f e m 0.08 (0.003) x b 6 5 pl a c ? x ? ? y ? notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeters 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. d e y 12 3 4 5 l 6 1.35 0.0531 0.5 0.0197 mm inches scale 20:1 0.5 0.0197 1.0 0.0394 0.45 0.0177 0.3 0.0118 *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* h e 0.08 0.12 0.18 0.003 0.005 0.007 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?t ypicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license un der its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended f or surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in a ny manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada japan : on semiconductor, japan customer focus center 2 ? 9 ? 1 kamimeguro, meguro ? ku, tokyo, japan 153 ? 0051 phone : 81 ? 3 ? 5773 ? 3850 NTZD3152P/d literature fulfillment : literature distribution center for on semiconductor p.o. box 61312, phoenix, arizona 85082 ? 1312 usa phone : 480 ? 829 ? 7710 or 800 ? 344 ? 3860 toll free usa/canada fax : 480 ? 829 ? 7709 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : http://onsemi.com order literature : http://www.onsemi.com/litorder for additional information, please contact your local sales representative.
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